| PART |
Description |
Maker |
| LY6210248GL-70LL LY6210248GL-70LLIT LY6210248ML-55 |
1024K X 8 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| LY62L102516 LY62L102516E LY62L102516GL LY62L102516 |
1024K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| LY62L102616 LY62L102616E LY62L102616I LY62L102616L |
1024K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| LY62L10248 LY62L10248E LY62L10248GL LY62L10248GV L |
1024K X 8 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| 29F080-12 |
8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY 800万位[1024K × 8]的CMOS平等部门闪存
|
Macronix International Co., Ltd.
|
| EN29LV160B-70TP EN29LV160B-90BP EN29LV160B-90TIP E |
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only 16兆位048K × 8 1024K x 16位）闪存引导扇区闪存，CMOS 3.0伏，
|
Eon Silicon Solution, Inc.
|
| EDI8F321024C15MZC EDI8F321024C20MZC EDI8F321024C25 |
15ns; 5V power supply; 1024K x 32 static RAM CMOS, high speed module
20ns; 5V power supply; 1024K x 32 static RAM CMOS, high speed module
25ns; 5V power supply; 1024K x 32 static RAM CMOS, high speed module
|
White Electronic Designs
|
| BS62LV1600ECG70 BS62LV1600ECG55 BS62LV1600FCP55 BS |
Very Low Power CMOS SRAM 2M X 8 bit 极低功耗CMOS SRAMx 8
Very Low Power CMOS SRAM 2M X 8 bit 2M X 8 STANDARD SRAM, 55 ns, PBGA48
Very Low Power CMOS SRAM 2M X 8 bit 2M X 8 STANDARD SRAM, 55 ns, PDSO44
|
BRILLIANCE SEMICONDUCTOR INC
BRILLIANCE SEMICONDUCTOR, Inc.
Brilliance Semiconducto...
|
| EN29LV160BB-70TIP EN29LV160BB-70BIP EN29LV160BT-70 |
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
|
Eon Silicon Solution Inc.
|
| KM684000 KIM684000L-8L KIM684000-10 KIM684000-5 KI |
512Kx8 bit CMOS static RAM, 85ns, low power
512Kx8 bit CMOS static RAM, 100ns, low power
524/ 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM
PT 16C 16#16 PIN PLUG
524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 52488字8位高速CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
